dm c3400s dw document number: ds 37690 rev. 1 - 2 1 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = + 25c q1 30 0.4 ? @ v gs = 10 v 0.65 a 0.7 ? @ v gs = 4 .5v 0.52 a q2 - 3 0 0. 9 ? @ v gs = - 10 v - 0. 4 5 a 1.7 ? @ v gs = - 4 .5v - 0.33 a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor c ontrol ? power management functions ? dc - dc converters features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: sot363 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.027 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm c 3400s dw - 7 sot363 3000 /tape & reel dm c 3400s dw - 13 sot363 10000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900p pm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 2014 2015 2016 2017 2018 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view csi = product type marking code ym = date code marking y or y = year (ex: b = 201 4 ) m = month (ex: 9 = september) esd protected csi y m t op view pin out q2 p - channeal q1 n - channeal s 2 d 2 d 1 s 1 g 2 g 1 d2 s2 g2 g ate protection diode d1 s1 g1 g ate protection diode
dm c3400s dw document number: ds 37690 rev. 1 - 2 2 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value _q1 value _q2 units drain - source voltage v dss 30 - 3 0 v gate - source voltage v gss 20 2 0 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 ? a = + 70 ? d 0. 65 0. 5 0 - 0. 4 5 - 0. 3 6 a maximum continuous body diode f orward current (note 6 ) i s 0. 4 - 0. 35 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 4 - 3 a thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units total power dissipation (note 5 ) p d 0. 31 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 4 06 c/w total power dissipation (note 6 ) p d 0.3 9 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 3 19 c/w thermal resistance, junction to case r j c 126 c/w operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics C n c hannel C q1 ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250a dss - - 1 ds = 24 v, v gs = 0v gate - source leakage i gss - - 10 gs = 16 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0.8 - 1 .6 v v ds = v gs , i d = 250 a ds (on) - 0.2 0.4 ? gs = 10 v, i d = 0.59 a - 0.3 0.7 v gs = 4 .5v, i d = 0.2 a diode forward voltage v sd - 0.8 1.2 v v gs = 0v, i s = 0.23 a dynamic characteristics (note 8 ) input capacitance c iss - 55 - pf v ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 8.5 - pf reverse transfer capacitance c rss - 6.5 - pf gate resistance r g - 92 - ? ds = v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5v ) q g - 0. 6 - nc v ds = 10 v, i d = 250m a total gate charge ( v gs = 10 v ) q g - 1. 4 - nc gate - source charge q gs - 0.2 - nc gate - drain charge q gd - 0. 1 - nc turn - on delay time t d( on ) - 3.8 - ns v gs = 10 v, v ds = 3 0 v, i d = 100 m a , r g = 1 r - 3.5 - ns turn - off delay time t d( off ) - 25.2 - ns turn - off fall time t f - 18.8 - ns
dm c3400s dw document number: ds 37690 rev. 1 - 2 3 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw electrical characteristics C p c hannel C q2 ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 3 0 - - v v gs = 0v, i d = - 250a dss - - - 1 ds = - 24 v, v gs = 0v gate - source leakage i gss - - 10 gs = 16 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 1 - - 2. 6 v v ds = v gs , i d = - 250 a ds(on) - 0.36 0.9 ? gs = - 10 v, i d = - 0.42 a - 0.57 1.7 v gs = - 4 .5v, i d = - 0.2 a diode forward voltage v sd - - 0.8 - 1.2 v v gs = 0v, i s = - 0.23 a dynamic characteristics (note 8 ) input capacitance c iss - 5 4 - pf v ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 1 0 - pf reverse transfer capacitance c rss - 8.3 - pf gate resistance r g - 240 - ? ds = v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 4.5v ) q g - 0.6 - nc v ds = - 10 v, i d = - 0.24 a total gate charge ( v gs = - 10 v ) q g - 1.3 - nc gate - source charge q gs - 0.2 - nc gate - drain charge q gd - 0.2 - nc turn - on delay time t d( on ) - 5.7 - ns v gs = - 10 v, v dd = - 1 5 v, i d = - 0.5 a, r g = 1 r - 8.8 - ns turn - off delay time t d( off ) - 35 - ns turn - off fall time t f - 19 - ns notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm c3400s dw document number: ds 37690 rev. 1 - 2 4 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw typical characteristics - n - channel 0.0 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =2.0v v gs =2.5v v gs =3.0v v gs =3.5v v gs =4.0v v gs =4.5v v gs =10v 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) fig ure 2. typical transfer characteristic v ds =5v t a =150 a =125 a =85 a = - 55 a =25 ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 5 7 9 11 13 15 17 19 21 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =590ma i d =200ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.2 0.4 0.6 0.8 1 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs = 4.5v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance (normalized ) t j , junction temperature ( gs =4.5v, i d =200ma v gs =10v, i d =590ma
dm c3400s dw document number: ds 37690 rev. 1 - 2 5 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw 0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs =4.5v, i d =200ma v gs =10v, i d =590ma 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = - 55 a =25 a =85 a =125 a =150 gs =0v 1 10 100 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 v gs (v) qg (nc) figure 11. gate charge v ds =10v, i d =250ma 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs =10v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100
dm c3400s dw document number: ds 37690 rev. 1 - 2 6 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw typical characteristics - p - channel 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 13. typical output characteristic v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 3.5v v gs = - 4.0v v gs = - 4.5v v gs = - 10v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) figure 14. typical transfer characteristic v ds = - 5v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 15. typical on - resistance vs. drain current and gate voltage v gs = - 4.5v v gs = - 10v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 16. typical transfer characteristic i d = - 420ma i d = - 200ma 0 0.2 0.4 0.6 0.8 1 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 17. typical on - resistance vs. drain current and temperature v gs = - 4.5v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 10v, i d = - 420ma v gs = - 4.5v, i d = - 200ma
dm c3400s dw document number: ds 37690 rev. 1 - 2 7 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( gs = - 10v, i d = - 420ma v gs = - 4.5v, i d = - 200ma 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 21. diode forward voltage vs. current t a = - 55 a =25 a =85 a =125 a =150 gs =0v 1 10 100 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 22. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 v gs (v) qg (nc) figure 23. gate charge v ds = - 10v, i d = - 0.24a 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24. soa, safe operation area t j(max) =150 a =25 gs =10v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm c3400s dw document number: ds 37690 rev. 1 - 2 8 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf the for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf the for the latest version. 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 25. transient thermal resistance r ja (t)=r(t) * r ja r ja =413 sot363 dim min max typ a 0.10 0.30 0.25 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d 0.65 typ f 0.40 0.45 0.425 h 1.80 2.20 2.15 j 0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.22 0.11 ? ? all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 x z y c1 c2 c2 g a m j l d b c h k f
dm c3400s dw document number: ds 37690 rev. 1 - 2 9 of 9 www.diodes.com february 2015 ? diodes incorporated new product new product dm c3400s dw important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. l ife support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. li fe support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support devi ce or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that m ay be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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